TL;DR: Samsung Electronics has successfully developed its 10nm-class 6th-generation D1c DRAM process, enabling advanced HBM4 memory production. This breakthrough enhances chip stability, reduces ...

TL;DR: Samsung is redesigning its 6th-generation 1c DRAM to improve yield rates and support its next-gen HBM4 process. The redesign aims to address issues with chip size and stability, which ...

Former employees of Samsung Electronics have been indicted on charges of leaking the company’s state-designated core technology to a Chinese dynamic random-access memory (DRAM) chipmaker, prosecutors ...

What just happened? The Seoul Central District Prosecutors' Office has indicted 10 former Samsung Electronics employees for violating South Korea's Industrial Technology Protection Act, which ...

ChangXin Memory Technologies (CXMT) has accelerated its next-generation DRAM development, transitioning from 17nm to 16nm process technology for its first DDR5 product, according to TechInsights. The ...

Seoul prosecutors have arrested and indicted three former employees of Samsung Electronics for allegedly leaking advanced nanoscale DRAM process technology to China's Changxin Memory Technologies ...

TAICHUNG, Taiwan, Dec. 11, 2025 /PRNewswire/ -- Winbond Electronics Corporation, a leading global supplier of semiconductor memory solutions, today announced the release of its new 8Gb DDR4 DRAM, ...