The MSK3004 is an H-bridge MOSFET power module available in a space efficient isolated ceramic tab power SIP package. This device contains P-channel MOSFETS for the top transistors and N-channel ...

MS Kennedy introduces its 100 volt, 10 ampere full H-Bridge power circuit module, the MSK3020. The device is packaged in a space efficient isolated ceramic tab power SIP package for direct heat ...

Cree, one of the market leaders in silicon carbide (SiC) power electronics, introduced new Wolfspeed 650V SiC MOSFETs, which are envisioned for applications where efficiency is a key priority, ...

DURHAM, N.C.--(BUSINESS WIRE)--Wolfspeed, A Cree Company, and a leading global supplier of silicon carbide (SiC) power products, has introduced the first fully-qualified commercial power module from ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...

Wide-bandgap (WBG) technologies, such as gallium-nitride (GaN) devices and silicon-carbide (SiC) MOSFETs, have recently made their way to electrified powertrain (e-powertrain) applications. These ...

Santa Clara, CA and Kyoto, Japan, April 28, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced that SMA Solar Technology AG, a leading global specialist in photovoltaic and storage system ...

Thomas Stierle, CEO E-Mobility Division at Schaeffler (left) and Dr. Kazuhide Ino, Member of the Board and Managing Executive Officer at ROHM A strategic partnership between ROHM and Schaeffler to ...

Intended for use in 1500V DC applications such as photovoltaic (PV) inverters, electric vehicle (EV) chargers, high frequency DC/DC converters and energy storage systems, the device is intended to ...

A key semiconductor characteristic is bandgap that indicates the amount of energy required to jolt an electron into a conducting state. A wide bandgap (WBG) enables ...