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Mesoporous silicon: Etching technique reveals unique electronic transport propertiesSilicon is the best-known semiconductor material. However, controlled nanostructuring drastically alters the material's properties. Using a specially developed etching apparatus, a team at HZB has ...
We’ve been eagerly following [ProjectsInFlight]’s stepwise journey toward DIY semiconductors, including all the ups and downs, false leads, and tedious optimizations needed to make it possible ...
By leveraging innovations in chemistry, AI, and sustainable practices, the industry is poised for continued growth and ...
A cutting-edge AI acceleration platform powered by light rather than electricity could revolutionize how AI is trained and ...
An article recently made available on Engineering delves into silicon carbide (SiC)-based pressure sensors. A comprehensive review paper titled ...
Anisotropic wet etching is a common method for fabricating nanowires from various materials, such as silicon, germanium, or III-V semiconductors. By using etchants with high selectivity for specific ...
For example, chlorine-based gases are commonly used for etching silicon, while fluorine-based gases are used for etching silicon dioxide and nitride. Wet etching involves the use of liquid chemical ...
To obtain anisotropic profiles, the DSiE technique or the Deep Reactive Ion Etching (DRIE) repeatedly integrates isotropic silicon etching and passivation steps. With the help of a high-density plasma ...
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