Details of experimental (SIMS) channeled profiles in Si(100) for MeV dopants (B, P, and As) are compared with Monte-Carlo calculations (IMSIL and SRIM) for crystalline and amorphous Si in an ion ...

High energy implanters for 300 mm substrates are required to operate over a large range of energy and beam current. This must be accomplished without compromising throughput or the advantages of ...